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The GTI Forum 2025, with the theme “Inclusive AI Powered by Intelligent Network” will take place at AI for Good Global Summit 2025 in Geneva, Switzerland. The forum will bring together insightful leaders and experts from organizations, global operators, industry partners, universities and research institutions to share views on the integration of network and AI, the cutting-edge theories, technologies and innovative applications, explore the inclusive use of AI in various industries such as manufacturing, agriculture, healthcare and education, as well as discuss the development trends in the era of digital intelligence and their impactful role in achieving the UN SDGs.
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GTI 5G Device RF Component Research Report_v1.0

2018-02-22 10:33:18| Source:

Table of Contents
1 Executive Summary


2 Abbreviations


3 Introduction


4 References


5 5G Device RF Component Industry Status


6 Sub-6GHz 5G Device RF Component
6.1 Sub-6GHz 5G Power Amplifier
6.1.1 Existing Mobile Device Commercial Power Amplifier
6.1.2 Sub-6GHz 5G Power Amplifier Design
6.2 Sub-6GHz 5G Filter
6.2.1 Existing Mobile Device Commercial Filter
6.2.2 3.3GHz-4.2GHz 5G Filter Design
6.2.3 4.4GHz-5GHz 5G Filter Design
6.3 Sub-6GHz 5G Low Noise Amplifier
6.3.1 Existing Mobile Device Commercial Low Noise Amplifier Products
6.3.2 Sub-6GHz 5G Low Noise Amplifier Design


7 mmWave 5G Device RF Component
7.1 mmWave 5G Power Amplifier
7.2 mmWave 5G Filter
7.3 mmWave 5G Low Noise Amplifier
7.4 Switches for mmWave
7.4.1 What makes a ‘Great’ 5G Switch?
7.4.2 SOI Technology for 5G Switching


8 Related ‘Black Technologies’
8.1 Engineered Substrate
8.1.1 What is \'Engineered Substrate\'?
8.1.2 Why do we need \'Engineered Substrate\'?
8.1.3 Application
8.2 Engineered Substrate: \'Anything on Anything\'
8.2.1 Smart Cut™
8.2.2 Smart Stacking™
8.2.3 Epitaxy
8.3 CMOS on SOL
8.3.1 CMOS on SOI basics
8.3.2 Basic SOI Advantages
8.3.3 PD-SOI and FD-SOI – Definition
8.3.4 Floating body and Body contact
8.4 CMOS on SOI for RF
8.4.1 RF-SOI
8.4.2 PD-SOI for RF
8.4.3 FD-SOI
8.5 Non Silicon Engineered Substrate
8.5.1 Non Silicon materials for RF
8.5.2 Example 1: Indium Phosphide on Gallium Arsenide
8.5.3 Example 2: Piezo on Insulator

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